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| HD1530JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features Figure 1. Package STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION 3 2 1 TO-264 Applications HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV, AND HIGH -END MONITORS Description The device uses a Diffused Collector in Planar technology which adopts "Enhanced High Voltage Structure" (EHVS1) that was developed to fit High-Definition CRT displays. The new HD product series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages. Figure 2. Internal Schematic Diagram Table 1. Order Codes Marking HD1530JL Package TO-264 Packing TUBE Part Number HD1530JL July 2005 rev.1 1/5 www.st.com 5 HD1530JL Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitte-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25C Storage Temperature Max. Operating Junction Temperature Value 1500 700 10 26 40 10 20 200 -65 to 150 150 Unit V V V A A A A W C C Table 3. Symbol RthJC Thermal Data Parameter Thermal Resistance Junction-Case____________________Max Value 0.625 Unit C/W Table 4. Symbol ICES IEBO Electrical Characteristics (TCASE = 25C; unless otherwise specified) Parameter Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCE = 1500V VCE = 1500V____TC = 125C VEB = 5V IC = 10mA IE = 10mA 700 10 2.5 1 28 5 8 s ns s ns s ns 1.5 Min. Typ. Max. 0.2 2 10 Unit mA mA A V V V V VCEO(SUS) Collector-Emitter Note: 1 Susting Voltage (IB = 0) VEBO VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Emitter-Base Voltage (IC = 0) Collector-Emitter Saturation Voltage IC = 13A _____ IB = 3.25A Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC = 13A _____ IB = 3.25A IC = 1A _____ VCE = 5V IC = 13A ____ VCE = 5V IC = 12A ____ _ fh = 32KHz IB(on) = 1.5A ___ IB(off) = -6.1A IC = 12A _____ fh = 48KHz IB(on) = 2A ____ IB(off) = -6.7A IC = 6.5A _____ fh = 100KHz IB(on) = 0.9A ___ IB(off) = -4.6A 3.3 240 2.8 200 1.5 110 ts tf ts tf ts tf Note: 1 Pulsed duration = 300 s, duty cycle 1.5%. 2/5 HD1530JL Table 5. TO-264 Mechanical Data Figure 3. TO-264 Drawing 3/5 HD1530JL Table 6. Revision History Date 05-July-2005 Revision 1 Initial release. Changes 4/5 HD1530JL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 5/5 |
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